Students are able to describe and interpret the internal structures and technologies of current and upcoming power semiconductor devices. They develop a deeper understanding of frontend & backend processes in the manufacturing of power semiconductors.
They can explain and analyze the static and dynamic operating behavior of discrete power devices. They can also assess their relevance for system robustness & reliability.
Students develop a sound understanding of the physical processes in a power semiconductor device and are able to evaluate the technical features and properties of the devices, in particular, electrical, thermal and mechanical features. This leads them to a deep understanding of the respective and specific features of the underlying physical mechanisms in the semiconductor.
Based on the knowledge of device functionality and manufacturing processes, including packaging and assembly, students are able to assess the strengths and weaknesses of the respective components and select the appropriate component with the appropriate specifications for a given application. They are able to evaluate and assess all relevant parameters, to identify and assess problems with specific devices and to derive optimized solutions.

ILV "Physics of Power Electronics"

• Overview of the current status of front-end processes and relevant assembly processes in the production of power semiconductors
• Physical interaction of different processes and their effects on the properties of electrical devices as well as typical power semiconductor structures and technology features
• Overview of the history of power semiconductor devices (bipolar types (thyristors and GTOs) and current state of the art in IGBT modules)
• General overview of different classes of power semiconductors:
  Main focus is on new state-of-the-art devices such as MOSFETs, IGBTs and fast rectifiers; each device is introduced by an explanation of its basic structure and its most important technical characteristics; the underlying physical mechanisms of power semiconductor devices are explained in detail, focusing on the electrical, thermal and mechanical properties; an insight into the changing and increasingly demanding requirements for robustness and reliability of the devices concludes this part.
• A comparison of the material properties and technology variants of wide band gap (SiC, GaN) and silicon semiconductors is presented and their effects on the performance of the devices are discussed.
• The static and dynamic behaviour of power switching devices is considered and the limits of their safe operating range (SOA) are described. Various typical failure mechanisms are explained.

Lecture script as provided in the course (required)
Lutz Josef, Schlangenotto Heinrich, Scheuermann Uwe, De Doncker Rik "Semiconductor Power Devices; Physics, Characteristics, Reliability", Springer, 2011
Linder Stefan "Power Semiconductors", EPFL Press, 2006
Baliga B. Jayant "Fundamentals of Power Semiconductor Devices", 2nd ed., Springer, 2019
Nishi Yoshio, Doering Robert "Handbook of Semiconductor Manufacturing Technology", 2nd ed., CRC Press 2007

Integrated course - teaching & discussion, demonstration, practical examples, home work

immanent examination character: participation, presentation, assignment reports, written/oral exam