• Students are able to understand in detail silicon-based semiconductor devices, including
  • CMOS process flow
  • the wafer fab manufacturing process steps
  • Technology characterization
  • Yield and reliability terms.

• Students can apply the basics of semiconductor physics to formulate the operation principles of important electronic devices such as
  • pn-junctions
  • bipolar junction transistors (BJT's)
  • MOS transistors.
• Students can extract a mathematical large-signal and small-signal model of the basic electronic devices for hand-calculations.

None

• IC technologies and fabrication including
  • Introduction to semiconductors
  • Explanation of fabrication facilities
  • Integrated circuits process technology steps with emphasis on CMOS technology
  • Integrated circuits packaging
  • Fab-design interfaces
  • Device reliability issues related to design.

• Basics in semiconductor physics and mathematical modelling of
  • pn-junctions
  • Carrier drift and diffusion in semiconductors
  • Bipolar junction transistors
  • MOS transistor

Lecture material as provided in the course (required)
Recommended reading as follows:

• S. Wolf, Microchip Manufacturing, Lattice Pr., 2003.
• S. M. Sze, M. K. Lee, Semiconductor Devices: Physics and Technology,Wiley, 2012.
• S. M. Sze, Y. L. Li, K. K. Li, Semiconductor Devices, Wiley, 4. Ed., 2021.
• J. B. Kuo, CMOS VLSI Engineering, Springer, 2013.
• J. D. Plummer et al., Silicon VLSI Technology: Fundamentals, Practice and Modeling, Pearson College Div., 2020.
• J. Burghartz, Guide to State-of-the-Art electronic Devices, Wiley-IEEE Press, 2013.

Teaching & discussion, collaborative learning based on assignments and homework

Integrated module examination
Immanent examination character: Written/oral exam, including homework assignments, presentations and lecture contribution